Infineon IRS2011PBF

HIGH AND LOW SIDE DRIVER Buffer/Inverter Based Peripheral Driver, CMOS, PDIP8

200 V high-side and low-side gate driver IC, PDIP8, RoHS

In a Tube of 50, Infineon IRS2011PBF Dual High and Low Side MOSFET Power Driver, 1A 8-Pin, PDIP

Driver 200V 1A 2-OUT High and Low Side Non-Inv 8-Pin PDIP Tube

25ns 2 10V 80ns 20V 800mV，2.7V Inverting MOSFET，NChannel 15ns half-bridge 1A，1A PDIP-8 Through hole mounting 5.33mm(height)

IC, DRIVER, HIGH/LOW SIDE, DIP8; Device Type:MOSFET; Module Configuration:High Side / Low Side; Peak Output Current:1A; Input Delay:60ns; Output Delay:60ns; Supply Voltage Range:10V to 20V; Driver Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2011; No. of Outputs:2; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Sink Current:1A; Output Sink Current Min:1000mA; Output Source Current Max:1A; Output Source Current Min:1000mA; Output Voltage:220V; Output Voltage Max:20V; Package / Case:DIP; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:Through Hole

200 V High and Low Side Driver IC with typical 1 A source and 1 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Floating gate driver designed for bootstrap operation; Fully operational to +200 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Independent low-side and high-side channels; Input logic HIN/LIN active high; Undervoltage lockout for both channels; 3.3 V and 5 V input logic compatible; CMOS Schmitt-triggered inputs with pull-down; Matched propagation delay for both channels