Infineon IRLU2703PBF
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-03-13
LTD Date2008-09-13
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InfineonIRFU3707ZPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5Milliohms;ID 56A;I-Pak (TO-251AA);PD 50W
Descripciones
Descripciones de Infineon IRLU2703PBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.045Ohm;ID 23A;I-Pak (TO-251AA);PD 45W
Single N-Channel 30 V 45 W 15 nC Hexfet Power Mosfet Through Hole - TO-251AA
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
Infineon SCT
HEXFET Power MOSFET Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET Operating temperature: -55...175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 45 W
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, 30V, 22A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:30V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:38W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:23A; Junction to Case Thermal Resistance A:3.3°C/W; On State resistance @ Vgs = 10V:45mohm; Package / Case:IPAK; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulse Current Idm:96A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Current Rating23 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Fall Time20 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance450 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation38 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
On-State Resistance45 mΩ
Package Quantity3000
PackagingBulk
Power Dissipation38 W
Rds On Max45 mΩ
Resistance45 mΩ
Rise Time140 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time12 ns
Turn-On Delay Time8.5 ns
Voltage Rating (DC)30 V
Dimensions
Height9.78 mm
Length6.7056 mm
Width2.3876 mm
Cumplimiento
Clasificación ambiental
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento