Infineon IRLR7821TRPBF
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRLR7821TRPBF | 0 | 2K | Bulk | 23h | |||||||
| Farnell | IRLR7821TRPBF | 0 | 1 | Cut Tape | 6h | |||||||
| Win Source | WS-IRLR7821TRPBF | 20.552 | 85 | 7h | ||||||||
| Worldway Electronics | IRLR7821TRPBF | 11.745 | 7 | Tape & Reel | 1d | |||||||
| SHENGYU ELECTRONICS | IRLR7821TRPBF | 37.813 | 1 | 5d |
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-11-15
LTD Date2020-05-15
Componentes relacionados
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MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5Milliohms;ID 65A;D-Pak (TO-252AA);PD 75W
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Descripciones
Descripciones de Infineon IRLR7821TRPBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5Milliohms;ID 65A;D-Pak (TO-252AA);PD 75W
Single N-Channel 30V 10 mOhm 10 nC HEXFET® Power Mosfet - TO-252AA
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
N CHANNEL MOSFET, 30V, 65A, D-PAK; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:65A;
Power Field-Effect Transistor, 65A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:65A; On Resistance, Rds(on):12.5mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D-Pak ;RoHS Compliant: Yes
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)65 A
Current Rating65 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time3.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.03 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation75 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Elements1
On-State Resistance10 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation75 W
Rds On Max10 mΩ
Resistance10 MΩ
Rise Time4.2 ns
Threshold Voltage1 V
Turn-Off Delay Time10 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)30 V
Dimensions
Height2.26 mm
Length6.7056 mm
Width6.22 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento