Infineon IRLR024NTRLPBF
$ 0.8
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRLR024NTRLPBF | 176 | 1 | Cut Tape | ||||||||
| Rochester Electronics | IRLR024NTRLPBF | 1570 | 12h | |||||||||
| RS (Formerly Allied Electronics) | IRLR024NTRLPBF | 0 | 25 | Bulk | 3h | |||||||
| Farnell | IRLR024NTRLPBF | 2 | 1 | Cut Tape | 12h | |||||||
| Win Source | WS-IRLR024NTRLPBF | 98.020 | 310 | 13h |
Historial de existencias
Tendencia de 3 meses: +690%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
Componentes relacionados
InfineonAUIRLR024N
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
International RectifierAUIRLR024NTRL
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package
InfineonIRLR024NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 17A;D-Pak (TO-252AA);PD 45W
onsemiHUFA76409D3S
17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | MOSFET N-CH 60V 18A DPAK
Descripciones
Descripciones de Infineon IRLR024NTRLPBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 17A;D-Pak (TO-252AA);PD 45W
Single N-Channel 55 V 0.11 Ohm 15 nC HEXFET® Power Mosfet - TO-263-3
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N CHANNEL MOSFET, 55V, 17A, D-PAK; Trans; N CHANNEL MOSFET, 55V, 17A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 65 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 74 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 7.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 45
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +690%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)17 A
Current Rating17 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance480 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
On-State Resistance65 mΩ
Package Quantity3000
Power Dissipation38 W
Rds On Max65 mΩ
Rise Time74 ns
Schedule B8541290080
Turn-Off Delay Time20 ns
Turn-On Delay Time7.1 ns
Voltage Rating (DC)55 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento