Infineon IRLMS6702TRPBF
$ 0.248
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1996-03-21
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2022-10-15
LTD Date2023-04-15
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Descripciones
Descripciones de Infineon IRLMS6702TRPBF suministradas por sus distribuidores.
-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS
Infineon SCT
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.2Ohm;ID -2.4A;Micro6;PD 1.7W;VGS +/-12V
IRLMS6702TRPBF,MOSFET, P-CHANN EL, -20V, -2.3A, 200 MOHM, 5.
Single P-Channel 20 V 0.375 Ohm 8.8 nC HEXFET® Power Mosfet - MICRO-6
HEXFET POWER MOSFET Power Field-Effect Transistor, 2.4A I(D), 20V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.4A; On Resistance Rds(On):0.2Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700Mv Rohs Compliant: Yes |Infineon IRLMS6702TRPBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, P, LOGIC, TSOP-6; Transistor Polarity:P Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:1.7W; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2.4A; Current Temperature:25°C; Full Power Rating Temperature:25°C; On State Resistance @ Vgs = 4.5V:200mohm; P Channel Gate Charge:5.8nC; Package / Case:TSOP; Power Dissipation Pd:1.7W; Power Dissipation Pd:1.7W; Pulse Current Idm:13A; SMD Marking:2C; Termination Type:SMD; Voltage Vds:-20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Min:700mV
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)2.3 A
Current Rating-2.3 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance210 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation780 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance200 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation780 mW
Rds On Max200 mΩ
Resistance200 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage-700 mV
Turn-Off Delay Time21 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.45 mm
Length2.9972 mm
Width1.75 mm
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Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento