Infineon IRLML0060TRPBF
$ 0.164
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRLML0060TRPBF | 147.000 | 3K | 5h | ||||||||
| Newark | IRLML0060TRPBF | 1148 | 1 | Cut Tape | ||||||||
| Future Electronics | IRLML0060TRPBF | 402.000 | 3K | Tape & Reel | ||||||||
| Arrow Electronics | IRLML0060TRPBF | 55.499 | 1 | |||||||||
| Rutronik | TMOSS6799 | 84.000 | 3K | 10h |
Historial de existencias
Tendencia de 3 meses: -10.04%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
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0 piezas disponibles
Fichas técnicas y documentos
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Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Component Search Engine | SímboloFootprint | 3D | Descargar |
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | Descargar |
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Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-12-02
Lifecycle StatusProduction (Last Updated: 4 weeks ago)
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Descripciones
Descripciones de Infineon IRLML0060TRPBF suministradas por sus distribuidores.
Transistor MOSFET N-Ch. 60V 2,7A 1,25W 0,092Ohm SOT23 IRLML0060TRPBF
60V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Single N-Channel 60 V 116 mOhm 2.5 nC 1.25 W Silicon SMT Mosfet - SOT-23
Power MOSFET, N Channel, 60 V, 2.7 A, 0.092 ohm, SOT-23, Surface Mount
MOSFET, 60V, 2.7A, 92 MOHM, 2.5 NC QG, SOT-23
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N CH, 60V, 2.7A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):78mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.25W; Voltage Vgs Max:16V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.7 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 116 / Gate-Source Voltage V = 16 / Fall Time ns = 4.2 / Rise Time ns = 6.3 / Turn-OFF Delay Time ns = 6.8 / Turn-ON Delay Time ns = 5.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.25
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: -10.04%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.7 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance92 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time4.2 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance290 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
On-State Resistance92 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.25 W
Rds On Max92 mΩ
Recovery Time21 ns
Resistance92 MΩ
Rise Time6.3 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time6.8 ns
Turn-On Delay Time5.4 ns
Dimensions
Height1.12 mm
Length3.0226 mm
Width1.397 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IRLML0060TRPBF.
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento