Infineon IRLL2705TRPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.04 Ohm; Id 3.8A; SOT-223; Pd 1W; Vgs +/-16V; -55
$ 0.403
Production
Página del fabricanteFicha técnica

Precio y existencias

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DistributorSKUMinPkg
Avnet
3
IRLL2705TRPBF27.5002500
23h
Newark
2
IRLL2705TRPBF13881Cut Tape
RutronikTMOSS679425002500
5h
Rochester ElectronicsIRLL2705TRPBF500
21h
Arrow Electronics
2
IRLL2705TRPBF11.9611

Fichas técnicas y documentos

Descargar fichas técnicas y documentación del fabricante para Infineon IRLL2705TRPBF.

Newark

Datasheet9 páginasHace 22 años
Datasheet10 páginasHace 22 años

element14 APAC

RS (Formerly Allied Electronics)

Jameco

iiiC

Historial de existencias

Tendencia de 3 meses:
-36.02%
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Cadena de suministros

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descripciones

Descripciones de Infineon IRLL2705TRPBF suministradas por sus distribuidores.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 3.8A;SOT-223;PD 1W;VGS +/-16V;-55
RS (Formerly Allied Electronics)
Power MOSFET, N Channel, 55 V, 5.2 A, 40 Milliohms, SOT-223 (TO-261AA), 4 Pins, Surface Mount
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55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
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Single N-Channel 55 V 0.065 Ohm 48 nC HEXFET® Power Mosfet - SOT-223
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IRLL2705TRPBF,MOSFET, 55V, 3.8 A, 40 MOHM, 32 NC QG, LOGIC L
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HEXFET Power MOSFET Small Signal Field-Effect Transistor
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Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R Pb free
Avnet Japan
Power Field-Effect Transistor, 3.8A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
IHS
Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:3.8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:1W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRLL2705TRPBF.
Newark
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3.8 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 16 / Fall Time ns = 22 / Rise Time ns = 12 / Turn-OFF Delay Time ns = 35 / Turn-ON Delay Time ns = 6.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.1
Distrelec

Imágenes

Infineon
Farnell
Farnell
RS (Formerly Allied Electronics)
TME
Conrad
South Microelectronics
Lanka Micro
Rochester Electronics
iiiC

Alias de fabricantes

Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del número de componente

Este componente podría ser conocido por estos números de componente alternativos:

  • IRFIRLL2705TRPBF
  • IRLL2705TRPBF.
  • SP001558266