Infineon IRL530NPBF
$ 0.48
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +2.43%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-10-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-10-15
LTD Date2023-04-15
Componentes relacionados
InfineonIRF530NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 90Milliohms;ID 17A;TO-220AB;PD 70W;gFS 12S
InfineonIRF9530NPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;TO-220AB;PD 79W;VGS +/-20V
Descripciones
Descripciones de Infineon IRL530NPBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 17A;TO-220AB;PD 79W;VGS +/-16V
Transistor IRL530N N-Channel MOSFET 100V 12A TO-220
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 100 V 0.15 Ohm 34 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220AB
MOSFET Transistor, N-Channel, TO-220AB
Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:100V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:63W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:63W; Power Dissipation Pd:63W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 100 / Gate-Source Voltage V = 16 / Fall Time ns = 26 / Rise Time ns = 53 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 7.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 79
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +2.43%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)17 A
Current Rating17 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance800 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation63 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance100 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation79 W
Rds On Max100 mΩ
Recovery Time210 ns
Resistance100 mΩ
Rise Time53 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time30 ns
Turn-On Delay Time7.2 ns
Voltage Rating (DC)100 V
Dimensions
Height20.56 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IRL530NPBF.
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento