Infineon IRG4BC30FD-SPBF
$ 6.32
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRG4BC30FD-SPBF | 0 | 1K | Bulk | 15h | |||||||
| Microchip USA | IRG4BC30FD-S | 156 | 600 | Tube | 20h | |||||||
| Win Source | WS-IRG4BC30FD-S | 24.000 | 45 | 2h | ||||||||
| Worldway Electronics | IRG4BC30FD-S | 18.378 | 7 | Tube | 1h | |||||||
| Esaler Electronic | IRG4BC30FD-S | 200 | 17h |
Modelos CAD
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-12-02
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2020-06-30
LTD Date2020-12-31
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Descripciones
Descripciones de Infineon IRG4BC30FD-SPBF suministradas por sus distribuidores.
Copacked 600V IGBT in a D2-Pak package with a hyperfast 1-8 kHz diode, D2PAKCOPAK, RoHS
Infineon SCT
Trans IGBT Chip N-CH 600V 31A 3-Pin(2+Tab) D2PAK
Target Applications: Air Conditioner; Dryer; Pump; Solar; UPS; Washing Machine
IGBT, D2-PAK; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:17A; Fall Time Max:230ns; Package / Case:D2-PAK; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:27ns; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:600V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.8 V
Collector Emitter Voltage (VCEO)600 V
Current Rating31 A
Element ConfigurationSingle
Fall Time230 ns
Max Collector Current31 A
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity50
PackagingBulk
Power Dissipation100 W
Reverse Recovery Time42 ns
Rise Time27 ns
Schedule B8541290080
Voltage Rating (DC)600 V
Dimensions
Height4.699 mm
Length10.668 mm
Width9.652 mm
Cumplimiento
Clasificación ambiental
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento