Infineon IRFS23N15DTRLP
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | IRFS23N15DTRLP | 0 | 1 | Cut Tape | 1d | |||||||
| Microchip USA | IRFS23N15D | 111 | 600 | Tube | 22h | |||||||
| Win Source | WS-IRFS23N15D | 60 | 30 | 7h | ||||||||
| Worldway Electronics | IRFS23N15D | 17.971 | 7 | Tube | 6h | |||||||
| Esaler Electronic | IRFS23N15D | 50 | 7h |
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-04-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-10-03
LTD Date2014-04-03
Componentes relacionados
InfineonAUIRF3315S
MOSFET, N-CH, 150V, 21A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
InfineonIRF3315SPBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.082Ohm;ID 21A;D2Pak;PD 94W;VGS +/-20V;-55
Descripciones
Descripciones de Infineon IRFS23N15DTRLP suministradas por sus distribuidores.
N CH SMPS MOSFET, HEXFET, 150V, 23A, D2PAK; Transistor Polarity:N Channel; Conti
Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A) | MOSFET N-CH 150V 23A D2PAK
Single N-Channel 150 V 90 mOhm 37 nC HEXFET® Power Mosfet - D2PAK
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 150V 23A 3-Pin(2+Tab) D2PAK T/R
MOSFET, N-CH, 150V, 23A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; P
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)23 A
Current Rating23 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time8.4 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation136 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance90 mΩ
Package Quantity800
Power Dissipation3.8 W
Rds On Max90 mΩ
Rise Time32 ns
Schedule B8541290080
Turn-Off Delay Time18 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)150 V
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento