Infineon IRFR9024NPBF
$ 1.04
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-06-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
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Descripciones
Descripciones de Infineon IRFR9024NPBF suministradas por sus distribuidores.
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -11A;D-Pak (TO-252AA);PD 38W
Single P-Channel 55 V 0.175 Ohm 19 nC HEXFET® Power Mosfet - TO-252AA
MOSFET P-CH 55V 11A DPAK / Trans MOSFET P-CH Si 55V 11A 3-Pin(2+Tab) DPAK Tube
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, -55V, 11A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:55V; On Resistance Rds(on):175mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:38W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-11A; Junction to Case Thermal Resistance A:3.3°C/W; Package / Case:DPAK; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulse Current Idm:44A; SMD Marking:IRFR9024N; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)11 A
Current Rating-11 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance175 mΩ
Drain to Source Voltage (Vdss)-55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation38 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance175 mΩ
Package Quantity3000
Power Dissipation38 W
Rds On Max175 mΩ
Recovery Time71 ns
Resistance175 mΩ
Rise Time55 ns
TerminationSMD/SMT
Threshold Voltage-4 V
Turn-Off Delay Time23 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-55 V
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento