Infineon IRFR3710ZPBF
$ 1.71
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFR3710ZPBF | 0 | 5 | Bulk | 3h | |||||||
| Farnell | IRFR3710ZPBF. | 0 | 5 | 14h | ||||||||
| Microchip USA | IRFR3710ZPBF | 364 | 3K | Tube | 3d | |||||||
| Sensible Micro | IRFR3710ZPBF | 51 | >1wk | |||||||||
| Win Source | WS-IRFR3710ZPBF | 40.220 | 110 | 15h |
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-07-31
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Componentes relacionados
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MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 12.8 Milliohms;ID 42A;D-Pak (TO-252AA);-55de
InfineonIRFR3410TRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 34Milliohms;ID 31A;D-Pak (TO-252AA);-55deg
InfineonIRFR3410PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 34Milliohms;ID 31A;D-Pak (TO-252AA);-55deg
Descripciones
Descripciones de Infineon IRFR3710ZPBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 15Milliohms;ID 56A;D-Pak (TO-252AA);-55deg
Single N-Channel 100 V 18 mOhm 69 nC HEXFET® Power Mosfet - TO-252AA
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Lighting LED
N Channel Mosfet, 100V, 56A, D-Pak; Transistor Polarity:n Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.018Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Current Rating42 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time42 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.93 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance18 mΩ
Package Quantity3000
Power Dissipation140 W
Rds On Max18 mΩ
Recovery Time53 ns
Resistance18 MΩ
Rise Time43 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time53 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)100 V
Dimensions
Height2.2606 mm
Length6.1976 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento