Infineon IRFR3518PBF
$ 1.83
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-09-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Componentes relacionados
InfineonIRFR2407PBF
Transistor: N-MOSFET; unipolar; 75V; 42A; 0.026ohm; 110W; -55+175 deg.C; SMD; TO252(DPAK)
InfineonIRFR2307ZPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 12.8 Milliohms;ID 42A;D-Pak (TO-252AA);-55de
Descripciones
Descripciones de Infineon IRFR3518PBF suministradas por sus distribuidores.
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N CHANNEL MOSFET, 80V, 30A, D-PAK; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:80V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:30A; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:150A; SMD Marking:IRFR3518; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)38 A
Current Rating38 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance29 mΩ
Drain to Source Voltage (Vdss)80 V
Dual Supply Voltage80 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.71 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance29 mΩ
Package Quantity3000
Power Dissipation110 W
Rds On Max29 mΩ
Rise Time25 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time37 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)80 V
Dimensions
Height2.26 mm
Length6.7056 mm
Width6.22 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento