Infineon IRFR3410TRLPBF

Single N-Channel 100 V 39 mOhm 37 nC HEXFET® Power Mosfet - DPAK
$ 0.517
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DistributorSKUMinPkg
NewarkIRFR3410TRLPBF44921Cut Tape
Arrow Electronics
3
IRFR3410TRLPBF39081
Rochester ElectronicsIRFR3410TRLPBF17.850
17h
DigiKey
2
IRFR3410TRLPBFCT-ND11721Cut Tape
AvnetIRFR3410TRLPBF03K
19h

Fichas técnicas y documentos

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IHS

Datasheet11 páginasHace 21 años

Farnell

Historial de existencias

Tendencia de 3 meses:
+14.04%
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Cadena de suministros

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descripciones

Descripciones de Infineon IRFR3410TRLPBF suministradas por sus distribuidores.

Single N-Channel 100 V 39 mOhm 37 nC HEXFET® Power Mosfet - DPAK
Future Electronics
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IHS
MOSFET, N-CH, 100V, 31A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 31A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Farnell
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Infineon
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 31 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 39 / Gate-Source Voltage V = 20 / Fall Time ns = 13 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110
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Infineon
Farnell
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Future Electronics
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Alias de fabricantes

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  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del número de componente

Este componente podría ser conocido por estos números de componente alternativos:

  • SP001572792