Infineon IRFR024NTRLPBF
$ 0.469
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Distribuidor
SKU
Mín.
Pkg
Precios por volumen
Historial de existencias
Tendencia de 3 meses: -21.78%
Modelos CAD
0 modelos disponibles
Componentes alternativos
0 piezas disponibles
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-02
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
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Descripciones
Descripciones de Infineon IRFR024NTRLPBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 17A;D-Pak (TO-252AA);PD 45W
Single N-Channel 55V 0.075 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
45W(Tc) 20V 4V@ 250µA 20nC@ 10 V 1individualNChannel 55V 75mΩ@ 10A,10V 17A 370pF@25V TO-252 SMD mount 6.5mm*6.22mm*2.3mm
N CHANNEL MOSFET, 55V, 17A, DPAK; TRANSI; N CHANNEL MOSFET, 55V, 17A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3Pins
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: -21.78%
Modelos CAD
0 modelos disponibles
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)17 A
Current Rating17 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time27 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance370 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance75 mΩ
Package Quantity3000
Power Dissipation38 W
Rds On Max75 mΩ
Resistance75 MΩ
Rise Time34 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time19 ns
Turn-On Delay Time4.9 ns
Voltage Rating (DC)55 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento