Infineon IRFP4668PBF

IRFP4668PBF N-channel MOSFET Transistor, 130 A, 200 V, 3-Pin TO-247AC
$ 2.505
Production
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Precio y existencias

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DistributorSKUMinPkg
Future Electronics
2
IRFP4668PBF310Tube
Arrow Electronics
2
IRFP4668PBF10991
RutronikTMOSP12230365025
20h
Rochester ElectronicsIRFP4668PBF94
1d
RS (Formerly Allied Electronics)IRFP4668PBF01Bulk
2h

Fichas técnicas y documentos

Descargar fichas técnicas y documentación del fabricante para Infineon IRFP4668PBF.

Newark

Datasheet8 páginasHace 17 años

IHS

iiiC

Historial de existencias

Tendencia de 3 meses:
-16.20%
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Cadena de suministros

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-08
Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descripciones

Descripciones de Infineon IRFP4668PBF suministradas por sus distribuidores.

IRFP4668PBF N-channel MOSFET Transistor, 130 A, 200 V, 3-Pin TO-247AC
RS (Formerly Allied Electronics)
Single N-Channel 200 V 9.7 mOhm 161 nC HEXFET® Power Mosfet - TO-247AC
Future Electronics
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 200 V, 130 A, 0.008 ohm, TO-247AC, Through Hole
Avnet
N CHANNEL MOSFET, 200V, 130A, TO-247AC;; N CHANNEL MOSFET, 200V, 130A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:200V; On Re; Available until stocks are exhausted
element14 APAC
N Channel Mosfet, 200V, 130A, To-247Ac; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:130A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:30V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes |Infineon IRFP4668PBF.
Newark
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Infineon
MOSFET, 200V 130A TO-247AC; Transistor Type:Power MOSFET; Transistor Polarity:N; Typ Voltage Vds:200V; Cont Current Id:130A; On State Resistance:8mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:5V; Case Style:TO-247AC; Termination Type:Through Hole; Operating Temperature Range:-55°C to + 175°C; Max Voltage Vds:200V; Power Dissipation:520W; Pulse Current Idm:520A; Transistor Case Style:TO-247AC
Farnell
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 130 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 8 / Gate-Source Voltage V = 30 / Fall Time ns = 74 / Rise Time ns = 105 / Turn-OFF Delay Time ns = 64 / Turn-ON Delay Time ns = 41 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247AC / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 520
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Imágenes

Infineon
RS
Augswan
TME
Newark
Distrelec
Micros
iiiC
UTSource
UTSource
International Rectifier
LCSC
Future Electronics

Alias de fabricantes

Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del número de componente

Este componente podría ser conocido por estos números de componente alternativos:

  • IRFP 4668PBF
  • IRFP4668
  • IRFP4668-PBF
  • IRFP4668PBF.
  • SP001572854