Infineon IRFI4227PBF
$ 2.313
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRFI4227PBF | 8 | 1 | |||||||||
| RS (Formerly Allied Electronics) | IRFI4227PBF | 0 | 300 | Bulk | 12h | |||||||
| Farnell | IRFI4227PBF | 0 | 2K | 20h | ||||||||
| Mouser | 942-IRFI4227PBF | 1 | 1 | Tube | ||||||||
| Microchip USA | IRFI4227PBF | 1348 | 50 | Tube | 7d |
Historial de existencias
Tendencia de 3 meses: +888%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Modelos CAD
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|---|---|---|---|
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 EE Concierge | SímboloFootprint | ||
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-09-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
Componentes relacionados
InfineonIRFI4321PBF
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB FullPak package, TO-220-3 FP, RoHS
InfineonIRFI4229PBF
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB Full-Pak package
InfineonIRFI4228PBF
150V Single N-Channel PDP Switch HEXFET Power MOSFET in a TO-220AB Full-Pak package
Descripciones
Descripciones de Infineon IRFI4227PBF suministradas por sus distribuidores.
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB FullPak package
Trans MOSFET N-CH 200V 26A 3-Pin(3+Tab) TO-220AB Full-Pak
MOSFET, 200V, 26A, 22 MOHM, 73 NC QG, TO-220 FULLPACK
IRF14227 Series 200V 26A 46W 25mOhm TH Single N-Channel MOSFET TO-220-3
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:26A; On Resistance, Rds(on):25mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-TO-220AB ;RoHS Compliant: Yes
Power Field-Effect Transistor, 26A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 26 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 21 / Gate-Source Voltage V = 30 / Fall Time ns = 29 / Rise Time ns = 19 / Turn-OFF Delay Time ns = 11 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 46
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +888%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)26 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance4.6 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation46 W
Min Breakdown Voltage200 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance22 mΩ
Package Quantity2000
Power Dissipation18 W
Rds On Max25 mΩ
Rise Time19 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time11 ns
Turn-On Delay Time17 ns
Dimensions
Height19.8 mm
Length10.6172 mm
Width4.826 mm
Cumplimiento
Clasificación ambiental
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento