Infineon IRFH7932TR2PBF
$ 0.53
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFH7932TR2PBF | 0 | 800 | Bulk | 1h | |||||||
| Farnell | IRFH7932TR2PBF | 0 | 1 | 12h | ||||||||
| Worldway Electronics | IRFH7932TR2PBF | 19.924 | 7 | Tape & Reel | 1d | |||||||
| Win Source | WS-IRFH7932TR2PBF | 20 | 13h | |||||||||
| Quest | IRFH7932TR2PBF | 300 | 11h |
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-03-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
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Descripciones
Descripciones de Infineon IRFH7932TR2PBF suministradas por sus distribuidores.
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
MOSFET, 30V, 24A, 3.3MOHM, 34 NC QG, PQFN56
Trans MOSFET N-CH 30V 24A 8-Pin PQFN T/R
MOSFET PQFN-8 (5x6) N 30V 25 A
Power Field-Effect Transistor, 25A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:24A; On Resistance, Rds(on):3.3mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
MOSFET, N CH, 30V, 24A, PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Power Dissipation Pd:3.1W; Voltage Vgs Max:20V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
MountSurface Mount
Number of Pins8
Number of Terminals3
Technical
Continuous Drain Current (ID)25 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.27 nF
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
Power Dissipation3.1 W
Rds On Max3.3 mΩ
Recovery Time32 ns
Resistance3.3 MΩ
Rise Time48 ns
Threshold Voltage1.8 V
Turn-Off Delay Time23 ns
Turn-On Delay Time20 ns
Dimensions
Height939.8 µm
Length5 mm
Width5.1054 mm
Cumplimiento
Clasificación ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento