Infineon IRFH5250TR2PBF
$ 0.81
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFH5250TR2PBF | 0 | 800 | Bulk | 20h | |||||||
| Avnet | IRFH5250TR2PBF | 0 | 800 | 5h | ||||||||
| Farnell | IRFH5250TR2PBF | 0 | 1 | Cut Tape | 3h | |||||||
| Microchip USA | IRFH5250TR2PBF | 222 | 150 | Tray | 21h | |||||||
| Win Source | WS-IRFH5250TR2PBF | 5110 | 18 | 4h |
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-09-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
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Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
Descripciones
Descripciones de Infineon IRFH5250TR2PBF suministradas por sus distribuidores.
MOSFET N-CH 25V 45A PQFN / N-Channel 25 V 45A (Ta), 100A (Tc) Surface Mount 8-PQFN (5x6)
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
Trans MOSFET N-CH 25V 45A 8-Pin QFN T/R
MOSFET, N CH, 25V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):900µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:100A; Package / Case:QFN; Power Dissipation Pd:3.6W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)45 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.75 mΩ
Drain to Source Voltage (Vdss)25 V
Dual Supply Voltage25 V
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.93 nF
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
PackagingCut Tape
Power Dissipation3.6 W
Rds On Max1.15 mΩ
Recovery Time41 ns
Rise Time46 ns
TerminationSMD/SMT
Threshold Voltage1.8 V
Turn-Off Delay Time30 ns
Turn-On Delay Time28 ns
Dimensions
Height838.2 µm
Length5.9944 mm
Width5 mm
Cumplimiento
Clasificación ambiental
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento