Infineon IRF9953TRPBF
$ 0.465
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF9953TRPBF | 0 | 20 | Bulk | 2h | |||||||
| Farnell | IRF9953TRPBF | 0 | 1 | Cut Tape | 11h | |||||||
| Component Stockers USA | IRF9953TRPBF | 578 | >1wk | |||||||||
| Win Source | WS-IRF9953TRPBF | 2710 | 105 | 11h | ||||||||
| Worldway Electronics | IRF9953TRPBF | 15.392 | 7 | Tape & Reel | 11h |
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IRF9953TRPBF.
Modelos CAD
Descargue el símbolo, footprint y modelos en 3D STEP de Infineon IRF9953TRPBF desde uno de nuestros socios de confianza.
| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 Component Search Engine | SímboloFootprint | 3D | Descargar |
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | 3D | Descargar |
La página web del socio se abrirá en una nueva pestaña al descargar sus modelos CAD
Al descargar modelos CAD de Octopart, usted acepta nuestros Términos y Condiciones y nuestra Política de Privacidad.
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-11-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-10-15
LTD Date2023-04-15
Componentes relacionados
InfineonIRF9956TRPBF
MOSFET, Power;Dual N-Ch;VDSS 30V;RDS(ON) 0.1Ohm;ID 3.5A;SO-8;PD 2W;VGS +/-20V
InfineonIRF9952QPBF
30V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package
Diodes Inc.DMN3024LSD-13
Mosfet, Dual, N-Ch, 30V, 6.8A Rohs Compliant: Yes |Diodes Inc. DMN3024LSD-13
Diodes Inc.DMG4406LSS-13
Single N-Channel 30 V 2 W 12.5 nC Silicon Surface Mount Mosfet - SOIC-8
Descripciones
Descripciones de Infineon IRF9953TRPBF suministradas por sus distribuidores.
Transistor MOSFET Array Dual P-CH 30V 2.3A 8-Pin SOIC T/R
Avnet Japan
Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm) | MOSFET 2P-CH 30V 2.3A 8-SOIC
Dual P-Channel 30 V 0.4 Ohm 12 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH Si 30V 2.3A 8-Pin SOIC T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-2.3A; On Resistance, Rds(on):250mohm; Rds(on) Test Voltage, Vgs:-10V; Leaded Process Compatible:Yes RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = -2.3 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 250 / Gate-Source Voltage V = 20 / Fall Time ns = 6.9 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 9.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)2.3 A
Current Rating-2.3 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationDual
Fall Time6.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance190 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
On-State Resistance250 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max250 mΩ
Resistance250 mΩ
Rise Time14 ns
Schedule B8541290080
Turn-Off Delay Time20 ns
Turn-On Delay Time9.7 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IRF9953TRPBF.
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento