Infineon IRF9540NSTRLPBF
$ 0.7
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRF9540NSTRLPBF | 133.600 | 800 | 17h | ||||||||
| Newark | IRF9540NSTRLPBF | 4148 | 1 | Cut Tape | ||||||||
| Future Electronics | IRF9540NSTRLPBF | 7200 | 800 | Tape & Reel | ||||||||
| Rutronik | TMOSP12078 | 800 | 800 | 23h | ||||||||
| DigiKey | IRF9540NSTRLPBFCT-ND | 19.458 | 1 | Cut Tape |
Historial de existencias
Tendencia de 3 meses: +26.24%
Modelos CAD
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0 piezas disponibles
Modelos CAD
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-08-05
Lifecycle StatusProduction (Last Updated: 5 months ago)
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Descripciones
Descripciones de Infineon IRF9540NSTRLPBF suministradas por sus distribuidores.
Single P-Channel 100 V 117 mOhm 110 nC HEXFET® Power Mosfet - D2PAK
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.117Ohm;ID -23A;D2Pak;PD 110W;VGS +/-20V
Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-263 (D2PAK), Surface Mount
Trans MOSFET P-CH 100V 23A 3-Pin(2+Tab) D2PAK T/R / MOSFET P-CH 100V 23A D2PAK
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
MOSFET, P-CHANNEL, -100V, -23A, 117 MOHM, 64.7 NC QG, D2-PAK
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:23A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:4V; Power Dissipation:140W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRF9540NSTRLPBF.
MOSFET, P, 100V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:100V; On Resistance Rds(on):117mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-262AB; Current Id Max:-23A; Package / Case:D2-PAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:76A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 23 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 117 / Gate-Source Voltage V = 20 / Fall Time ns = 45 / Rise Time ns = 64 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +26.24%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)23 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance117 mΩ
Drain to Source Voltage (Vdss)-100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time51 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.45 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance117 mΩ
Package Quantity800
PackagingCut Tape
Power Dissipation94 W
Rds On Max117 mΩ
Resistance117 mΩ
Rise Time67 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time40 ns
Turn-On Delay Time13 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento