Infineon IRF9540NLPBF
$ 2.42
Obsolete
Precio y existencias
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Historial de existencias
Tendencia de 3 meses: -92.26%
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Descargar símbolo, footprint y 3D STEP
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-06-04
Lifecycle StatusObsolete (Last Updated: 7 months ago)
Componentes relacionados
InfineonIRF540NLPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-262;PD 130W;VGS +/-2
InfineonIRFSL4510PBF
MOSFET N-CH 100V 61A TO262 N-Channel 100 V 61A (Tc) 140W (Tc) Through Hole TO-262
InfineonIRF540ZLPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;TO-262;PD 92W;VGS +/-20
Descripciones
Descripciones de Infineon IRF9540NLPBF suministradas por sus distribuidores.
IRF9540NLPBF P-channel MOSFET Transistor, 23 A, 100 V, 3-Pin TO-262
Single P-Channel 100 V 117 mOhm 110 nC HEXFET® Power Mosfet - TO-262
-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:3.1W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC
3.1W(Ta)，110W(Tc) 20V 4V@ 250µA 110nC@ 10 V 1individualPChannel 100V 117mΩ@ 14A,10V 23A 1.45nF@25V TO-262 Through hole mounting 10.2mm*4.5mm*9.45mm
Transistor Polarity:p Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:23A; On Resistance Rds(On):0.117Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, P, 100V, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:100V; On Resistance Rds(on):117mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:3.1W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:430mJ; Capacitance Ciss Typ:1300pF; Current Iar:11A; Current Id Max:-23A; Fall Time tf:51ns; Gfs Min:5.3mA/V; On State Resistance Max:117mohm; P Channel Gate Charge:97nC; Package / Case:TO-262; Power Dissipation Pd:140W; Power Dissipation Pd:3.1W; Pulse Current Idm:76A; Rise Time:67ns; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: -92.26%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)23 A
Current Rating-23 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance117 mΩ
Drain to Source Voltage (Vdss)-100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time51 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance117 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.1 W
Rds On Max117 mΩ
Resistance117 mΩ
Rise Time67 ns
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time40 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-100 V
Dimensions
Height15.01 mm
Length10.668 mm
Width4.826 mm
Fichas técnicas y documentos
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Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento