Infineon IRF9240
$ 10.81
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
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Historial de existencias
Tendencia de 3 meses: -0.49%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Descripciones
Descripciones de Infineon IRF9240 suministradas por sus distribuidores.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
HEXFET POWER MOSFET / P-Channel 200 V 11A (Tc) 125W (Tc) Through Hole TO-204AA (TO-3)
-200V Single P-Channel Hi-Rel MOSFET in a TO-204AA package, TO-204AA-2
Infineon SCT
Power Field-Effect Transistor, 11A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-200V; Continuous Drain Current, Id:-11A; On Resistance, Rds(on):0.5ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-204AA ;RoHS Compliant: No
MOSFET, P, TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:200V; On Resistance Rds(on):500mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:125W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (18-Jun-2012); Avalanche Single Pulse Energy Eas:500mJ; Current Iar:11A; Current Id Max:-11A; Current Temperature:25°C; Device Marking:IRF9240; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Pulse Current Idm:44A; Repetitive Avalanche Energy Max:12.5mJ; Termination Type:Through Hole; Voltage Vds Typ:-200V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V; Weight:0.01kg
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: -0.49%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Body MaterialMetal
Case/PackageTO-3
MountThrough Hole
Number of Pins2
Number of Terminals2
Weight10 g
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance580 mΩ
Drain to Source Voltage (Vdss)-200 V
Dual Supply Voltage-200 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance500 mΩ
Power Dissipation125 W
TerminationThrough Hole
Threshold Voltage-4 V
Turn-Off Delay Time85 ns
Turn-On Delay Time35 ns
Dimensions
Height7.74 mm
Lead Pitch11 mm
Cumplimiento
Clasificación ambiental
Radiation HardeningNo
REACH SVHCYes
RoHSNon-Compliant
Declaraciones de cumplimiento