Infineon IRF7488PBF
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-09-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Componentes relacionados
InfineonIRF7495PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;SO-8;PD 2.5W;VGS +/-20
InfineonIRF7478TRPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 20 Milliohms;ID 7A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7478PBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 20 Milliohms;ID 7A;SO-8;PD 2.5W;VGS +/-20V
Descripciones
Descripciones de Infineon IRF7488PBF suministradas por sus distribuidores.
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 24 Milliohms;ID 6.3A;SO-8;PD 2.5W;VGS +/-20V
Power Field-Effect Transistor, 6.3A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.3A; Drain Source Voltage Vds:80V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.3A; External Length / Height:1.75mm; External Width:4.05mm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; Row Pitch:6.3mm; SMD Marking:F7488; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)6.3 A
Current Rating6.3 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance29 mΩ
Drain to Source Voltage (Vdss)80 V
Dual Supply Voltage80 V
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.68 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance29 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max29 mΩ
Rise Time12 ns
Threshold Voltage4 V
Turn-Off Delay Time44 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)80 V
Dimensions
Height1.75 mm
Length4.9784 mm
Row Spacing6.3 mm
Width4.05 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento