Infineon IRF7410PBF
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Modelos CAD
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-07-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
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Descripciones
Descripciones de Infineon IRF7410PBF suministradas por sus distribuidores.
INFINEON IRF7410PBF MOSFET Transistor, P Channel, 16 A, -12 V, 7 mohm, -4.5 V, -900 mV
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS +/-8V
Transistor MOSFET Positive Channel 20 Volt 16A 8-Pin SOIC
Single P-Channel 12 V 7 mOhm 91 nC HEXFET® Power Mosfet - SOIC-8
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 16A I(D), 12V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:12V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-16A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:65A; Row Pitch:6.3mm; SMD Marking:F7410; Termination Type:SMD; Voltage Vds Typ:-12V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:-4.5V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageSO
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)16 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)-12 V
Dual Supply Voltage-12 V
Element ConfigurationSingle
Fall Time200 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance8.676 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Nominal Vgs-900 mV
Number of Channels1
Number of Elements1
On-State Resistance7 mΩ
Package Quantity3800
Power Dissipation2.5 W
Recovery Time145 ns
Resistance7 MΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage-400 mV
Turn-Off Delay Time271 ns
Turn-On Delay Time13 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Row Spacing6.3 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento