Infineon IRF7406PBF
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-08-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Componentes relacionados
Descripciones
Descripciones de Infineon IRF7406PBF suministradas por sus distribuidores.
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS +/-20V
Single P-Channel 30 V 0.045 Ohm 59 nC HEXFET® Power Mosfet - SOIC-8
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, LOGIC, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.6W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5.8A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:1.6W; Power Dissipation Pd:1.6W; Pulse Current Idm:20A; Row Pitch:6.3mm; SMD Marking:F7406; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)6.7 A
Current Rating-5.8 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time47 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.1 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1 V
Number of Channels1
Number of Elements1
On-State Resistance45 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max45 mΩ
Recovery Time63 ns
Resistance45 mΩ
Rise Time33 ns
Threshold Voltage-1 V
Turn-Off Delay Time45 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.75 mm
Length4.9784 mm
Row Spacing6.3 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento