Infineon IRF7313PBF
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF7313PBF | 0 | 3800 | Bulk | 3h | |||||||
| Farnell | IRF7313PBF | 0 | 5 | 7h | ||||||||
| Win Source | WS-IRF7313PBF | 39.900 | 110 | 13h | ||||||||
| Worldway Electronics | IRF7313PBF | 13.827 | 7 | Tube | 12h | |||||||
| ICPartonline | IRF7313PBF | 14.240 | >1wk |
Modelos CAD
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-02-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Descripciones
Descripciones de Infineon IRF7313PBF suministradas por sus distribuidores.
Transistor MOSFET Array Dual N-CH 30V 6.5A 8-Pin SOIC Tube
Dual N-Channel 30 V 0.046 Ohm 33 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, DUAL, NN, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:30A; Row Pitch:6.3mm; SMD Marking:7313; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)6.5 A
Current Rating6.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance29 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationDual
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance650 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
On-State Resistance29 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2 W
Rds On Max29 mΩ
Recovery Time68 ns
Resistance29 mΩ
Rise Time8.9 ns
Threshold Voltage1 V
Turn-Off Delay Time26 ns
Turn-On Delay Time8.1 ns
Voltage Rating (DC)30 V
Dimensions
Height1.75 mm
Length4.9784 mm
Row Spacing6.3 mm
Width4.05 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento