Infineon IRF7241PBF
$ 0.76
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
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Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-01-31
Lifecycle StatusObsolete (Last Updated: 2 months ago)
Componentes relacionados
InfineonIRF7241TRPBF
MOSFET, Power;P-Ch;VDSS -40V;RDS(ON) 25Milliohms;ID -6.2A;SO-8;PD 2.5W;VGS +/-2
InfineonIRF7201PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7.3A;SO-8;PD 2.5W;VGS +/-20V;-55d
Descripciones
Descripciones de Infineon IRF7241PBF suministradas por sus distribuidores.
MOSFET, Power;P-Ch;VDSS -40V;RDS(ON) 25Milliohms;ID -6.2A;SO-8;PD 2.5W;VGS +/-2
Single P-Channel 40 V 41 mOhm 80 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH 40V 6.2A 8-Pin SOIC Tube
-40V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Small Signal Field-Effect Transistor, 6.2A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:40V; On Resistance Rds(on):41mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-6.2A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:25A; SMD Marking:F7241; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:-40V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:-10V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)6.2 A
Current Rating-6.2 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance41 mΩ
Drain to Source Voltage (Vdss)-40 V
Dual Supply Voltage-40 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.22 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Elements1
On-State Resistance41 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max41 mΩ
Recovery Time48 ns
Resistance41 MΩ
Rise Time280 ns
Threshold Voltage-3 V
Turn-Off Delay Time210 ns
Turn-On Delay Time24 ns
Voltage Rating (DC)-40 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento