Infineon IRF6722MTRPBF
Production
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF6722MTRPBF | 0 | 4800 | Bulk | 15h | |||||||
| Avnet | IRF6722MTRPBF | 0 | 4800 | 5h | ||||||||
| Component Stockers USA | IRF6722MTRPBF | 12.237 | >1wk | |||||||||
| Worldway Electronics | IRF6722MTRPBF | 15.313 | 7 | Tape & Reel | 3h | |||||||
| SHENGYU ELECTRONICS | IRF6722MTRPBF | 12.148 | 1 | 1d |
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-11-12
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Descripciones
Descripciones de Infineon IRF6722MTRPBF suministradas por sus distribuidores.
Single N-Channel 30 V 7.7 mOhm 17 nC HEXFET® Power Mosfet - DirectFET®
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 13 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
N Channel, MOSFET, 30V, 14A, DirectFET SQ; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.051ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.9V ;RoHS Compliant: Yes
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificaciones técnicas
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance7.7 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time6.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation42 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance7.7 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.3 W
Rds On Max7.7 mΩ
Rise Time7.8 ns
Turn-Off Delay Time9.5 ns
Turn-On Delay Time11 ns
Dimensions
Height676 µm
Length6.35 mm
Width5.05 mm
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento