Infineon IRF3710STRRPBF
$ 1.515
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRF3710STRRPBF | 11.200 | 16h | |||||||||
| RS (Formerly Allied Electronics) | IRF3710STRRPBF | 0 | 800 | Bulk | 4h | |||||||
| Win Source | WS-IRF3710STRRPBF | 15.970 | 80 | 17h | ||||||||
| Worldway Electronics | IRF3710STRRPBF | 16.233 | 7 | Tape & Reel | 16h | |||||||
| UnikeyIC | IRF3710STRRPBF | 1920 | 155 | Cut Tape | 16h |
Historial de existencias
Tendencia de 3 meses: +21.55%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IRF3710STRRPBF.
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-11
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2022-10-15
LTD Date2023-04-15
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Descripciones
Descripciones de Infineon IRF3710STRRPBF suministradas por sus distribuidores.
Single N-Channel 100 V 23 mOhm 130nC HEXFET® Power Mosfet - D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
IRF3710STRRPBF,MOSFET, 100V, 5 7A, 23 MOHM, 86.7 NC QG, D2-P
Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:57A; On Resistance Rds(On):0.023Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Msl:- Rohs Compliant: Yes
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +21.55%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)57 A
Current Rating57 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time47 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.13 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance23 mΩ
Package Quantity800
Power Dissipation3.8 W
Rds On Max23 mΩ
Resistance23 MΩ
Rise Time58 ns
Schedule B8541290080
Turn-Off Delay Time45 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)100 V
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IRF3710STRRPBF.
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento