Infineon IRF3709PBF

Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A⑥) | MOSFET N-CH 30V 90A TO-220AB

Single N-Channel 30 V 9 mOhm 41 nC HEXFET® Power Mosfet - TO-220-3

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB

MOSFET, 30V, 90A, 9 MOHM, 27 NC QG, TO-220AB

MOSFET N-CH 30V 90A TO220AB "N-Channel 30 V 90A (Tc) 3.1W (Ta), 120W (Tc) Through Hole TO-220AB"

Power Field-Effect Transistor, 90A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

3.1W(Ta)，120W(Tc) 20V 3V@ 250µA 41nC@ 5 V 1individualNChannel 30V 9mΩ@ 15A,10V 90A 2.672nF@16V TO-220AB Through hole mounting 10mm*4.4mm*15.65mm

MOSFET, N, 30V, 90A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:120W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Junction to Case Thermal Resistance A:1.04°C/W; On State resistance @ Vgs = 10V:9ohm; Package / Case:TO-220AB; Power Dissipation Pd:120W; Power Dissipation Pd:120W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V