Infineon IRF1407PBF

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0078Ohm;ID 130A;TO-220AB;PD 330W;VGS +/-20

Single N-Channel 75 V 7.8 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Power MOSFET, N Channel, 75 V, 130 A, 0.0078 ohm, TO-220AB, Through Hole

MOSFET, 75V, 130A, 7.8 MOHM, 160 NC QG, TO-220AB<AZ

Trans MOSFET N-CH 80V 130A 3-Pin(3+Tab) TO-220AB

Power Field-Effect Transistor, 130A I(D), 75V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

N Channel Mosfet, 75V, 130A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:130A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF1407PBF.

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

MOSFET, N, 75V, 130A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:130A; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:7.8ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:520A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V