Infineon IR21814SPBF

Tube IR21814SPBF Half-Bridge 1996 gate driver 60ns -40C~150C TJ 1.9A 2.3A 1W

600 V high-side and low-side gate driver IC, SOIC 14N, RoHS

IR2181 Series 600 V 1.9 A 20 V Supply Dual High And Low Side Driver - SOIC-14

Driver 600V 2.3A 2-OUT High and Low Side Non-Inv 14-Pin SOIC N T/R

High and Low Side Driver, SoftTurn-On, Noninverting Inputs, Separate High and Low Side Inputs, All High Voltage Pins On One Side, Separate Logic and Power Ground in a 14-Lead package

MOSFET Driver IC; Device Type:MOSFET; Supply Voltage Min:10V; Supply Voltage Max:25V; Termination Type:SMD; Package/Case:14-SOIC; No. of Pins:14; Operating Temperature Range:-40°C to +125°C; Fall Time, tf:20ns ;RoHS Compliant: Yes

600 V High and Low Side Driver IC with typical 1.9 A source and 2.3 A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead PDIP, 8 Lead SOIC, and 8 Lead PDIP.For the new version with our SOI technology we recommend 2ED21814S06J, providing integrated bootstrap diode, better robustness and higher switching frequency

DRIVER, MOSFET HIGH/LOW, SMD, 21814; Device Type:High Side / Low Side; Module Configuration:High Side / Low Side; Peak Output Current:2.3A; Input Delay:180ns; Output Delay:220ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:14; Operating Temperature Range:-40°C to +125°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Base Number:21814; IC Generic Number:21814; Logic Function Number:21814; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:1.9A; Output Sink Current Min:1700mA; Output Source Current Min:1700mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Power Dissipation Pd:1W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD; Turn Off Time:220ns; Turn On Time:180ns

The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.