Infineon IR2110STRPBF

500 V high-side and low-side gate driver IC with shutdown, SOIC 16W, RoHS

Tape & Reel (TR) IR2110SPBF Half-Bridge 1996 gate driver 25ns 17ns -40C~150C TJ 2A 2A 6V 9.5V

Dual High Side, Low Side Driver, 10V-20V Supply, 2.5A Out, 94ns Delay, SOIC-16

IR2110S Series Dual 20V Surface Mount High and Low Side Driver - SOIC-16

Gate Drivers; INFINEON; IR2110STRPBF; 2; 10 V - 20 V; 16; Surface Mount

EiceDRIVER™ 500 V high and low-side gate driver IC with typical 2.5 A source and 2.5 A sink current in 16 Lead SOIC package for IGBTs and MOSFETs with level-shift technology. Also available in 14 Lead PDIP.

Drivers IC; Device Type:High and Low Side; Supply Voltage Max:20V; Termination Type:SMD; Package/Case:16-SOIC; No. of Pins:16; Operating Temperature Range:-40°C to +125°C; IC Generic Number:2110; Operating Temp. Max:125°C ;RoHS Compliant: Yes

Type = Half Bridge / Outputs = 2 / Rise Time ns = 25 / Fall Time ns = 17 / Output Current A = 2 / Supply Voltage Min. V = 10 / Supply Voltage Max. V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 125 / Package Type = SOIC-16 / Pins = 16 / Mounting Type = SMD / MSL = Level-3 / Packaging = Tape & Reel / Length mm = 10.5 / Width mm = 7.6 / Height mm = 2.6 / Reflow Temperature Max. °C = 300

The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.