Infineon IR2106PBF

Tube IR2106 Half-Bridge 1996 gate driver 150ns 50ns -40C~150C TJ 200mA 350mA 0.8V 2.9V
$ 1.624
Obsolete

Precio y existencias

Fichas técnicas y documentos

Descargar fichas técnicas y documentación del fabricante para Infineon IR2106PBF.

IHS

Datasheet23 páginasHace 22 años
Datasheet23 páginasHace 22 años

Augswan

iiiC

Historial de existencias

Tendencia de 3 meses:
+0.00%

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Cadena de suministros

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8542.39.00.60
Introduction Date1999-03-12
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2022-11-30
LTD Date2023-05-31

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Descripciones

Descripciones de Infineon IR2106PBF suministradas por sus distribuidores.

Tube IR2106 Half-Bridge 1996 gate driver 150ns 50ns -40C~150C TJ 200mA 350mA 0.8V 2.9V
RoHS Compliant Active Tin/Lead (Sn/Pb) e0 IC Gate Driver 9.88mm 15V 0.35A 125C
IR2106 Series 600 V 200 mA 20 V Supply Dual High And Low Side Driver - PDIP-8
HIGH AND LOW SIDE DRIVER, SOFTTURN-ON, NONINVERTING INPUTS IN A 8-PIN DIP PACKAG
Half Bridge Based IGBT/MOSFET Driver, 0.35A, CMOS, PDIP8
MOSFET Driver IC; Device Type:MOSFET; Supply Voltage Min:10V; Supply Voltage Max:25V; Package/Case:8-DIP; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; Delay Matching:50ns; Fall Time, tf:50ns ;RoHS Compliant: Yes
600 V High and Low Side Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC, 14 Lead SOIC, and 14 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout; 3.3 V, 5 V, and 15 V logic input compatible; Matched propagation delay for both channels; Logic and power ground + /- 5 V offset; Lower di/dt gate driver for better noise immunity; Outputs in phase with inputs
The IR2106(4)(S) are high voltage,high speed power MOSFET and IGBT drivers with independent highand low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output,down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
DRIVER, MOSFET HIGH/LOW, 2106, DIP8; Device Type:High Side / Low Side; Module Configuration:High Side / Low Side; Peak Output Current:350mA; Input Delay:220ns; Output Delay:200ns; Supply Voltage Range:10V to 20V; Driver Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2106; IC Generic Number:2106; Logic Function Number:2106; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:200mA; Output Sink Current Min:250mA; Output Source Current Min:120mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:DIP; Power Dissipation Pd:1W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:Through Hole; Turn Off Time:200ns; Turn On Time:220ns

Alias de fabricantes

Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del número de componente

Este componente podría ser conocido por estos números de componente alternativos:

  • IR2106
  • IR2106PBF.
  • IRFIR2106PBF
  • SP001539196