Infineon IPP80R1K4P7XKSA1

Trans MOSFET N-CH 800V 4A 3-Pin(3+Tab) TO-220 Tube

A new benchmark in efficiency and thermal performance, PG-TO220-3, RoHS

Non-Compliant Production (Last Updated: 2 years ago) 500 32 W 1.4 Ω 1.2 Ω 800 V

Power Field-Effect Transistor, 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Infineon NMOS CoolMOS, Vds=800 V, 4 A, TO-220, , 3

IPP80R1K4P7 - 800V COOLMOS N-CHA

IPP80R1K4 - 800V COOLMOS N-CHANN

Mosfet, N-Ch, 800V, 4A, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(On):1.2Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes |Infineon Technologies IPP80R1K4P7XKSA1

800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.