Descripciones de Infineon IPP60R385CPXKSA1 suministradas por sus distribuidores.
N-Channel 650 V 0.385 Ohm CoolMOSTM Power Transistor - PG-TO-220-3
Power MOSFET, N Channel, 650 V, 9 A, 350Milliohms, TO-220, 3 Pins, Through Hole
Trans MOSFET N-CH 650V 9A 3-Pin(3+Tab) TO-220 Tube
83W(Tc) 20V 3.5V@ 340¦ÌA 22nC@ 10 V 1N 650V 385m¦¸@ 5.2A,10V 9A 790pF@100V TO-220
Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.
MOSFET, N, TO-220; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:9A; On State Resistance:0.385ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:650V; On Resistance Rds(on):385mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:9A; Package / Case:TO-220; Power Dissipation Pd:83W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V