Infineon IPN70R1K4P7SATMA1

Transistor MOSFET N-CH 700V 4A 3-Pin SOT-223 T/R

700V 4A 6.2W 1.4Ω@10V,700mA 3.5V@40uA 1 N-Channel SOT-223-3 MOSFETs ROHS

Combining excellent performance and ease-of-use, PG-SOT223-4-3, RoHS

MOSFET N-CHANNEL 700V 4A SOT223

Power Field-Effect Transistor, 4A I(D), 700V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

4.7nC 1N 700V 1.4¦¸@10V,700mA 4A SOT-223

Infineon MOSFET IPN70R1K4P7SATMA1

Mosfet, N-Ch, 700V, 4A, 6.2W, Sot-223; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:700V; On Resistance Rds(On):1.15Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon Technologies IPN70R1K4P7SATMA1

CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.700V and 800V CoolMOS™ P7 are optimized for flyback topologies. 600V CoolMOS™ P7 SJ MOSFET is suitable for hard as well as so switching topologies (Flyback, PFC and LLC).