Infineon IPL65R095CFD7AUMA1

Name: Infineon IPL65R095CFD7AUMA1
Brand: Infineon
SKU: IPL65R095CFD7AUMA1

Power MOSFET, N Channel, 650 V, 29 A, 0.068 ohm, VSON, Surface Mount

$ 2.7

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Distributor		SKU		Min	Pkg
Avnet	2	25AK0801	1441	1		5,780	3,910	3,180	2,960	2,960	21h
Newark		IPL65R095CFD7AUMA1	10.162	1	Cut Tape	2,810	2,810	2,810	2,700	2,700
Rochester Electronics		IPL65R095CFD7AUMA1	2820					2,230	2,000	1,880	19h
DigiKey	2	448-IPL65R095CFD7AUMA1CT-ND	70	1	Cut Tape	6,220	4,158	2,990	2,741	2,741
Future Electronics	2	IPL65R095CFD7AUMA1	0	3K	Tape & Reel					4,480

Historial de existencias

Tendencia de 3 meses: +52.12%

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Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2021-07-28

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

Descripciones

Descripciones de Infineon IPL65R095CFD7AUMA1 suministradas por sus distribuidores.

Power MOSFET, N Channel, 650 V, 29 A, 0.068 ohm, VSON, Surface Mount

EBV Elektronik

Trans MOSFET N-CH 650V 29A 4-Pin VSON EP T/R

Verical

Power Field-Effect Transistor, 29A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

Infineon NMOS, Vds=650 V, 29 A, ThinPAK 8 x 8, , 5

UnikeyIC

COOLMOS CFD7 SUPERJUNCTION MOSFE

DigiKey

Mosfet, N-Ch, 650V, 29A, Vson; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:29A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Qualification:-Rohs Compliant: Yes |Infineon Technologies IPL65R095CFD7AUMA1

Newark

Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPL65R095CFD7 in a ThinPAK 8x8 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

Infineon

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Newark

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