Infineon IPI60R299CPXKSA1
$ 1.26
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IPI60R299CPXKSA1.
Cadena de suministros
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-04-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-04-30
LTD Date2016-10-31
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N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
Descripciones
Descripciones de Infineon IPI60R299CPXKSA1 suministradas por sus distribuidores.
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-262 Tube
Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N, TO-262; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:11A; On State Resistance:0.299ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case ;RoHS Compliant: Yes
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: +0.00%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-262-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Resistance299 mΩ
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.1 nF
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation96 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation96 W
Rds On Max299 mΩ
Rise Time5 ns
Turn-Off Delay Time40 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)650 V
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IPI60R299CPXKSA1.
Cumplimiento
Clasificación ambiental
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento