Infineon IPI075N15N3GXKSA1

OPTLMOS N-CHANNEL POWER MOSFET / N-Channel 150 V 120A (Tc) 300W (Tc) Through Hole PG-TO262-3-1
$ 2.652
Production
Página del fabricanteFicha técnica

Precio y existencias

Ver todas las estructuras de precios
DistributorSKUMinPkg
Arrow ElectronicsIPI075N15N3GXKSA13931
DigiKeyIPI075N15N3GXKSA1-ND2601Tube
Rochester ElectronicsIPI075N15N3GXKSA1385.000
19h
AvnetIPI075N15N3GXKSA10500
4d
Future Electronics
2
IPI075N15N3GXKSA10500Tube

Fichas técnicas y documentos

Descargar fichas técnicas y documentación del fabricante para Infineon IPI075N15N3GXKSA1.

_legacy Avnet

Datasheet11 páginasHace 15 años

IHS

element14 APAC

iiiC

Historial de existencias

Tendencia de 3 meses:
-0.03%
Powered bySpectra logo

Modelos CAD

Descargue el símbolo, footprint y modelos en 3D STEP de Infineon IPI075N15N3GXKSA1 desde uno de nuestros socios de confianza.

ORIGENeCADmCADARCHIVOS
EE Concierge
SímboloFootprint
La página web del socio se abrirá en una nueva pestaña al descargar sus modelos CAD
Al descargar modelos CAD de Octopart, usted acepta nuestros Términos y Condiciones y nuestra Política de Privacidad.

Cadena de suministros

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-15
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
LTB Date2016-04-30
LTD Date2016-10-31

Componentes relacionados

InfineonIPP100N08S207AKSA1
MOSFET N-CH 75V 100A TO220-3 / N-Channel 75 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
Detalles
STMicroelectronicsSTB80NF55-06-1
N-channel 55 V, 5 mOhm, 80 A I2PAK STripFET(TM) II Power MOSFET
Detalles
InfineonIPI076N12N3GAKSA1
Mosfet, N-Ch, 120V, 100A, To-262 Rohs Compliant: Yes |Infineon Technologies IPI076N12N3GAKSA1
Detalles
InfineonIPP80N08S207AKSA1
MOSFET N-CH 75V 80A TO220-3 / N-Channel 75 V 80A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
Detalles
STMicroelectronicsSTB80NF55L-08-1
N-Channel 55V - 0.0065Ohm - 80A - I2PAK StripFET(TM) II POWER MOSFET
Detalles
STMicroelectronicsSTB60NF10-1
Power MOSFET Transistors N Ch 100V 0.019Ohm 80A
Detalles
InfineonIPI111N15N3GAKSA1
Mosfet, N-Ch, 150V, 83A, To-262 Rohs Compliant: Yes |Infineon Technologies IPI111N15N3GAKSA1
Detalles
InfineonIPI041N12N3GAKSA1
Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube
Detalles
onsemiFQI5N15TU
MOSFET N-CH 150V 5.4A I2PAK
Detalles
onsemiFQI15P12TU
Trans MOSFET P-CH 120V 15A 3-Pin(3+Tab) I2PAK Rail
Detalles
onsemiFQI32N12V2TU
Power Field-Effect Transistor, 32A I(D), 120V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Detalles

Descripciones

Descripciones de Infineon IPI075N15N3GXKSA1 suministradas por sus distribuidores.

OPTLMOS N-CHANNEL POWER MOSFET / N-Channel 150 V 120A (Tc) 300W (Tc) Through Hole PG-TO262-3-1
Win Source
Power MOSFET, N Channel, 150 V, 100 A, 0.0062 ohm, TO-262, Through Hole
EBV Elektronik
Power Field-Effect Transistor, 100A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Semicontronic
150V 100A 6.2m´Î@10V100A 300W 3V@270uA 10pF@75V N Channel 5.47nF@75V 70nC@0~10V -55¡Í~+175¡Í@(Tj) PG-TO262-3 MOSFETs ROHS
Dasenic
The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor.This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
Infineon
MOSFET, N CH, 100A, 150V, PG-TO262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:150V; On Resistance Rds(on):6.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; Current Id Max:100A; Operating Temperature Range:-55°C to +175°C; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
element14 APAC
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 120 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 7.5 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 46 / Turn-ON Delay Time ns = 25 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-262 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 300
Distrelec

Imágenes

Augswan
element14 APAC
TME
LZChips
Future Electronics
UTSource
iiiC
Rochester Electronics

Alias de fabricantes

Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del número de componente

Este componente podría ser conocido por estos números de componente alternativos:

  • IPI075N15N3 G
  • IPI075N15N3-G
  • IPI075N15N3G
  • IPI075N15N3GHKSA1
  • SP000680676