Infineon IPD60R1K4C6ATMA1

28.4W(Tc) 20V 3.5V@ 90¦ÌA 9.4nC@ 10 V 1N 600V 1.4¦¸@ 1.1A,10V 3.2A 200pF@100V TO-252 2.56mm

MOSFET Devices; INFINEON; IPD60R1K4C6; 600 V; 3.2 A; 28.4 W; 1.26 Ohm

Trans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) TO-252 T/R, PG-TO252-3, RoHS

N-Channel 600 V 3.2 A 28.4 W Surface Mount Mosfet - PG-TO252-3

Mosfet, N Channel, 600V, 3.2A, To252-3

XTR,PWR,MFT,IPD60R1K4,DPKN-CH,600V,3.2A,Qg=9.4nC RDS(on)=1.4ohms,Trr=230nS

Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-252

MOSFET, N-CH, 600V, 3.2A, TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.26ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Po

CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting