Infineon IPD50R3K0CEAUMA1

IPD50R3K0CE: 500 V 1.7 A 3 Ohm SMT CoolMOS CE Power Transistor - PG-TO252-3

Power MOSFET, N Channel, 500 V, 2.6 A, 2.7 ohm, TO-252 (DPAK), Surface Mount

Power Field-Effect Transistor, 1.7A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Mosfet, N-Ch, 500V, 2.6A, To-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:500V; On Resistance Rds(On):2.7Ohm; Rds(On) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon Technologies IPD50R3K0CEAUMA1

500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO252-3, RoHS

500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox