Infineon IPB180N03S4LH0ATMA1

30V, N-Ch, 0.95 mΩ max, Automotive MOSFET, D2PAK 7pin, OptiMOS™-T2, PG-TO263-7, RoHS

Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263

MOSFET 30V 0.9mOHM AECQ TO263 RoHSconf

Power Field-Effect Transistor, 180A I(D), 30V, 0.00095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263

MOSFET N-CH 30V 180A TO263-7-3

IPB180N03 - 20V-40V N-CHANNEL AUTOMOTIVE;

Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.