Infineon IPB024N08N5ATMA1
$ 2
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
Historial de existencias
Tendencia de 3 meses: -0.48%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IPB024N08N5ATMA1.
Cadena de suministros
Country of OriginAustria, Germany, Malaysia, Mexico
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-17
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2026-03-31
LTD Date2026-09-30
Componentes relacionados
onsemiFDB86360-F085
FDB86360 Series 80 V 110 A 1.8 mOhm N-Ch Power Trench Mosfet - D²PAK (TO-263AB)
STMicroelectronicsSTH140N8F7-2
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
Descripciones
Descripciones de Infineon IPB024N08N5ATMA1 suministradas por sus distribuidores.
Trans MOSFET N-CH 80V 166A Automotive 3-Pin(2+Tab) D2PAK T/R
Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package, PG-TO263-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 120A I(D), 80V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB024N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: -0.48%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance2.4 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.9 nF
Max Dual Supply Voltage80 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation214 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.4 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation214 W
Rds On Max2.4 mΩ
Rise Time14 ns
Schedule B8541290080
Turn-Off Delay Time46 ns
Turn-On Delay Time22 ns
Dimensions
Height4.5 mm
Fichas técnicas y documentos
Descargar fichas técnicas y documentación del fabricante para Infineon IPB024N08N5ATMA1.
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento