Infineon IPA80R1K4P7XKSA1

Transistor MOSFET N-Channel 800V 4A 3-Pin TO-220FP Tube

Infineon Technologies N channel CoolMOSP7 power device, 800 V, 4 A, TO-220, IPA80R1K4P7XKSA1

Power Field-Effect Transistor, 4A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Mosfet, N-Ch, 800V, 4A, To-220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(On):1.2Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes |Infineon Technologies IPA80R1K4P7XKSA1

800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.