Infineon BFP620H7764XTSA1
$ 0.271
NRND
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | BFP620H7764XTSA1 | 4293 | 1 | Cut Tape | ||||||||
| DigiKey | BFP620H7764XTSA1CT-ND | 6287 | 1 | Cut Tape | ||||||||
| Arrow Electronics | BFP620H7764XTSA1 | 776 | 1 | |||||||||
| Avnet | BFP620H7764XTSA1 | 0 | 3K | 1d | ||||||||
| Future Electronics | BFP620H7764XTSA1 | 0 | 3K | Tape & Reel |
Historial de existencias
Tendencia de 3 meses: -8.87%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
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0 piezas disponibles
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Modelos CAD
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| ORIGEN | eCAD | mCAD | ARCHIVOS |
|---|---|---|---|
 EE Concierge | SímboloFootprint | ||
 SnapEDA | Footprint | Descargar |
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Cadena de suministros
Country of OriginGermany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-05-01
Lifecycle StatusNRND (Last Updated: 3 weeks ago)
LTB Date2003-03-31
LTD Date2004-09-30
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Descripciones
Descripciones de Infineon BFP620H7764XTSA1 suministradas por sus distribuidores.
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon Germanium, NPN
RF TRANSISTOR, SOT-343; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.3V; Transition Frequency ft: 65GHz; Power Dissipation Pd: 185mW; DC Collector Current: 80mA; DC Current Gain hFE: 180hFE; RF Transistor Ca
Transistor Polarity = NPN / Continuous Collector Current (Ic) mA = 80 / Collector-Emitter Voltage (Vceo) V = 2.3 / DC Current Gain (hFE) = 180 / Collector-Base Voltage (Vcbo) V = 7.5 / Emitter-Base Voltage (Vebo) V = 1.2 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 65 / Power Dissipation (Pd) mW = 185 / Package Type = SOT-343 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel
Summary of Features: Highly linear low noise RF transistor; Provides outstanding performance for a wide range of wireless applications; Based on Infineon's reliable high volume SiGe:C technology; Ideal for CDMA and WLAN applications; Collector design provides high linearity of 14.5 dBm OP1dB for low voltage application; Maximum stable gain :Gms = 21.5 dB at 1.8 GHz ,Gma = 11 dB at 6 GHz; Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz; Outstanding noise figure NFmin = 1.3 dB at 6 GHz; Accurate SPICE GP model enables effective design in process; Pb-free (RoHS compliant) package; Qualified according AEC Q101
Transistor, RF SOT-343; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:2.3V; Power Dissipation Pd:185mW; DC Collector Current:80mA; DC Current Gain hFE:180; Operating Temperature Range:-65°C to +150°C; No. of Pins:3; Associated Gain Ga:21.5dB; Continuous Collector Current Ic:80mA; Continuous Collector Current Ic Max:80mA; Current Ic Continuous a Max:80mA; Current Ic hFE:50mA; Gain Bandwidth ft Typ:65GHz; Hfe Min:110; No. of Transistors:1; Noise Figure Typ:0.7dB; Output @ Third Order Intercept Point IP3:25dB; Package / Case:TSFP4; Power @ 1dB Gain Compression, P1dB:15dBm; Power Dissipation Ptot Max:185mW; SMD Marking:R2s; Termination Type:SMD; Test Frequency:1.8GHz; Transistor Case Style:TSFP; Voltage Vcbo:7.5V
Alias de fabricantes
Infineon tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Infineon también podría ser conocido por los siguientes nombres:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Historial de existencias
Tendencia de 3 meses: -8.87%
Modelos CAD
Descargar símbolo, footprint y 3D STEP
Componentes alternativos
0 piezas disponibles
Especificaciones técnicas
Physical
Case/PackageSOT
Contact PlatingTin
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Collector Base Voltage (VCBO)7.5 V
Collector Emitter Breakdown Voltage2.8 V
Collector Emitter Voltage (VCEO)2.3 V
Emitter Base Voltage (VEBO)1.2 V
Frequency65 GHz
Gain21.5 dB
hFE Min110
Hold Current100 mA
Max Breakdown Voltage2.8 V
Max Collector Current80 mA
Max Operating Temperature150 °C
Max Power Dissipation185 mW
Max Repetitive Reverse Voltage (Vrrm)15 V
Min Operating Temperature-65 °C
Noise Figure0.7 dB
Number of Elements1
Package Quantity3000
PackagingTape & Reel
PolarityNPN
Power Dissipation185 mW
Power Gain21.5 dB
Power Rating1 W
Transition Frequency65 GHz
Fichas técnicas y documentos
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Cumplimiento
Clasificación ambiental
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
Declaraciones de cumplimiento