Diodes Inc. ZXTP5401GTA
$ 0.196
Obsolete
Precio y existencias
Distribuidores autorizados
Distribuidores no autorizados
Vendedores no autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | ZXTP5401GTA | 0 | 1 | 16h | ||||||||
| Newark | ZXTP5401GTA | 0 | 1 | Cut Tape | ||||||||
| RS (Formerly Allied Electronics) | ZXTP5401GTA | 0 | 1K | Bulk | 6h | |||||||
| Win Source | WS-ZXTP5401GTA | 39.000 | 185 | 18h | ||||||||
| Worldway Electronics | ZXTP5401GTA | 226.224 | 7 | 17h |
Cadena de suministros
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-30
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2025-01-07
LTD Date2025-07-08
Descripciones
Descripciones de Diodes Inc. ZXTP5401GTA suministradas por sus distribuidores.
Trans GP BJT PNP 150V 2A 2000mW 4-Pin(3+Tab) SOT-223 T/R / TRANS PNP 150V 0.6A SOT223
150V 2W 50@1mA,5V 600mA PNP SOT-223-3 Bipolar (BJT) ROHS
ZXTP Series PNP 2 W 150 V 600 mA SMT General Purpose Transistor - SOT-223
150 V, SOT223, PNP HIGH VOLTAGE TRANSISTOR Power Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
Trans, Pnp, 150V, 0.6A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. ZXTP5401GTA
Bipolar Transistors - BJT PNP 150V 2A
Alias de fabricantes
Diodes Inc. tiene diversas marcas a nivel mundial que los distribuidores pueden usar como nombres alternativos. Diodes Inc. también podría ser conocido por los siguientes nombres:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Especificaciones técnicas
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals3
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)160 V
Collector Emitter Breakdown Voltage150 V
Collector Emitter Saturation Voltage-500 mV
Collector Emitter Voltage (VCEO)150 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min50
Max Breakdown Voltage150 V
Max Collector Current600 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
PolarityPNP
Power Dissipation2 W
Schedule B8541290080
Transition Frequency100 MHz
Dimensions
Height1.65 mm
Length6.7 mm
Width3.7 mm
Cumplimiento
Clasificación ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declaraciones de cumplimiento