Diodes Inc. DMP2004K-7
In Stock
Technical Specifications
Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight7.994566 mg
Technical
Continuous Drain Current (ID)-600 mA
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance900 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time19.2 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance175 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation550 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation550 mW
Rds On Max900 mΩ
Resistance900 mΩ
Rise Time4.3 ns
Schedule B8541210080
Threshold Voltage-1 V
Turn-Off Delay Time20.2 ns
Turn-On Delay Time8.5 ns
Dimensions
Height1 mm
Length2.9 mm
Width1.3 mm
Inventory History
3 month trend: -5.09%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.061
$ 0.113
Stock
8,513,701
116,954
Authorized Distributors
10
1
Mount
Surface Mount
-
Case/Package
SOT-23-3
-
Drain to Source Voltage (Vdss)
-20 V
-
Continuous Drain Current (ID)
-600 mA
-
Threshold Voltage
-1 V
-
Rds On Max
900 mΩ
-
Gate to Source Voltage (Vgs)
8 V
-
Power Dissipation
550 mW
-
Input Capacitance
175 pF
-
Engineering Resources
View Evaluation kits and Reference designs for Diodes Inc. DMP2004K-7.
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Trans MOSFET P-CH 20V 4.9A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 3.6A SOT-23
Descriptions
Descriptions of Diodes Inc. DMP2004K-7 provided by its distributors.
Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23
MOSFET P-CH 20V 600MA SOT23-3 / Trans MOSFET P-CH 20V 0.6A 3-Pin SOT-23 T/R
P-Channel 20 V 0.9 Ohms Surface Mount Enhancement Mode Mosfet - SOT-23-3
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-600mA; Source Voltage Vds:-20V; On Resistance
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -600mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.7ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 550mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
Inventory History
3 month trend: -5.09%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight7.994566 mg
Technical
Continuous Drain Current (ID)-600 mA
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance900 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time19.2 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance175 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation550 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation550 mW
Rds On Max900 mΩ
Resistance900 mΩ
Rise Time4.3 ns
Schedule B8541210080
Threshold Voltage-1 V
Turn-Off Delay Time20.2 ns
Turn-On Delay Time8.5 ns
Dimensions
Height1 mm
Length2.9 mm
Width1.3 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements