Diodes Inc. DMN2050LFDB-7
Technical Specifications
Physical
Case/PackageDFN
MountSurface Mount
Technical
Continuous Drain Current (ID)3.3 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time8 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance389 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation730 mW
Min Operating Temperature-55 °C
Number of Channels2
PackagingTape & Reel (TR)
Power Dissipation730 mW
Rds On Max45 mΩ
Rise Time8 ns
Turn-Off Delay Time25 ns
Turn-On Delay Time5 ns
Dimensions
Height605 µm
Inventory History
3 month trend: -4.71%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Diodes Inc. DMN2050LFDB-7.
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Descriptions
Descriptions of Diodes Inc. DMN2050LFDB-7 provided by its distributors.
Transistor MOSFET Array Dual N-CH 20V 4.5A 6-Pin uDFN2020 T/R
Mosfet, Dual, N-Ch, 20V, 4.5A Rohs Compliant: Yes |Diodes Inc. DMN2050LFDB-7
DMN Series 12 V 55 mOhm SMT Dual N-Ch Enhancement Mode Mosfet - U-DFN-2020-6
Trans MOSFET N-CH 20V 4.5A 6-Pin UDFN EP T/R
N-Channel Mosfet, 20V VDS, 12±V VGS
Diodes Inc SCT
场效应管, MOSFET, 双路, N沟道, 20V, 4.5A;
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
Inventory History
3 month trend: -4.71%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDFN
MountSurface Mount
Technical
Continuous Drain Current (ID)3.3 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time8 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance389 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation730 mW
Min Operating Temperature-55 °C
Number of Channels2
PackagingTape & Reel (TR)
Power Dissipation730 mW
Rds On Max45 mΩ
Rise Time8 ns
Turn-Off Delay Time25 ns
Turn-On Delay Time5 ns
Dimensions
Height605 µm